| PART |
Description |
Maker |
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
TE Connectivity, Ltd.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| SD219 SD217DE SD217DR SD219DR SD217 SD217CHP SD219 |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET
(SD217 / SD219) N CHANNEL ENHANCEMENT MODE D MOS POWER FET
|
List of Unclassifed Man...
Topaz Semiconductor
ETC[ETC]
|
| SD1106DD SD1106 SD1106AD SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET
N CHANNEL ENHANCEMENT MODE D MOS POWER FETS
|
Topaz Semiconductor
ETC[ETC]
|
| IRF520 IRF520FI 3002 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
| STP40N03L-20 4886 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMicroelectronics
|
| APT10021JFLL |
POWER MOS 7 1000V 37A 0.210 Ohm
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
